sqd40p10-40l www.vishay.com vishay siliconix s11-1559-rev. b 22-aug-11 1 document number: 67022 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 100 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 100 r ds(on) ( ? ) at v gs = - 10 v 0.040 r ds(on) ( ? ) at v gs = - 4.5 v 0.048 i d (a) - 38 configuration single s g d p-channel mosfet to-252 s gd top view drain connected to tab ordering information package to-252 lead (pb)-free and halo gen-free sqd40p10-40l-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 100 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d - 38 a t c = 125 c - 22 continuous source curr ent (diode conduction) a i s - 50 pulsed drain current b i dm - 150 single pulse avalanche current l = 0.1 mh i as - 44 single pulse avalanche energy e as 96 mj maximum power dissipation b t c = 25 c p d 136 w t c = 125 c 45 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 50 c/w junction-to-case (drain) r thjc 1.1
sqd40p10-40l www.vishay.com vishay siliconix s11-1559-rev. b 22-aug-11 2 document number: 67022 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 100 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 100 v --- 1 a v gs = 0 v v ds = - 100 v, t j = 125 c --- 50 v gs = 0 v v ds = - 100 v, t j = 175 c - - - 250 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 30 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 9.2 a - 0.033 0.040 ? v gs = - 10 v i d = - 9.2 a, t j = 125 c - - 0.074 v gs = - 10 v i d = - 9.2 a, t j = 175 c - - 0.093 v gs = - 4.5 v i d = - 7.7 a - 0.037 0.048 forward transconductance b g fs v ds = - 15 v, i d = - 9.2 a -35-s dynamic b input capacitance c iss v gs = 0 v v ds = - 25 v, f = 1 mhz - 4433 5545 pf output capacitance c oss - 301 380 reverse transfer capacitance c rss - 208 260 total gate charge c q g v gs = - 10 v v ds = - 50v, i d = - 9.2 a - 96 144 nc gate-source charge c q gs -8.4- gate-drain charge c q gd - 23.5 - gate resistance r g f = 1 mhz 1.5 3.13 4.7 ? turn-on delay time c t d(on) v dd = - 50 v, r l = 6.49 ? i d ? - 7.7 a, v gen = - 10 v, r g = 1.0 ? -1117 ns rise time c t r -1117 turn-off delay time c t d(off) - 78 117 fall time c t f -1523 source-drain diode ratings and characteristics b pulsed current a i sm - - - 150 a forward voltage v sd i f = - 7.7 a, v gs = 0 v -- 0.8- 1.5v
sqd40p10-40l www.vishay.com vishay siliconix s11-1559-rev. b 22-aug-11 3 document number: 67022 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 2 4 6 8 10 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 125 c t c = - 55 c t c = 25 c 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 r d s (on) -on-re s i s tance () i d - drain current (a) v gs gs gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 20 40 60 80 100 0 10 20 30 40 50 g f s -tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 1000 2000 3000 4000 5000 6000 7000 0 20 40 60 80 100 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss
sqd40p10-40l www.vishay.com vishay siliconix s11-1559-rev. b 22-aug-11 4 document number: 67022 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) i d = 9.2 a v d s = 50 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -0.4 -0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 9.2 a v gs = 4.5 v v gs = 10 v 0.00 0.05 0.10 0.15 0.20 0.25 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c - 135 - 130 - 125 - 120 - 115 - 110 - 105 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 10 ma
sqd40p10-40l www.vishay.com vishay siliconix s11-1559-rev. b 22-aug-11 5 document number: 67022 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-case 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 1 s ,10 s , dc square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 duty cycle = 0.5 single pulse 0.02
sqd40p10-40l www.vishay.com vishay siliconix s11-1559-rev. b 22-aug-11 6 document number: 67022 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized th ermal transient impedance, junction-to-ambient note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction to ambient (25 c) - normalized transient thermal impedance junction to case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67022 . 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =50 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05
ordering information www.vishay.com vishay siliconix revision: 01-jul-16 1 document number: 66957 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dpak / to-252 and reverse dpak ordering codes for the sq rugged series power mosfet s in the dpak / to-252 and reverse dpak packages: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code SQD07N25-350H SQD07N25-350H-ge3 SQD07N25-350H_ge3 sqd100n02-3m5l - sqd100n02-3m5l_ge3 sqd100n03-3m2l sqd100n03-3m2l-ge3 sqd100n03-3m2l_ge3 sqd100n03-3m4 sqd100n03-3m4-ge3 sqd100n03-3m4_ge3 sqd100n04-3m6 sqd100n04-3m6-ge3 sqd100n04-3m6_ge3 sqd100n04-3m6l sqd100n04-3m6l-ge3 sqd100n04-3m6l_ge3 sqd10n30-330h sqd10n30-330h-ge3 sqd10n30-330h_ge3 sqd15n06-42l sqd15n06-42l-ge3 sqd15n06-42l_ge3 sqd19p06-60l sqd19p06-60l-ge3 sqd19p06-60l_ge3 sqd23n06-31l sqd23n06-31l-ge3 sqd23n06-31l_ge3 sqd25n06-22l sqd25n06-22l-ge3 sqd25n06-22l_ge3 sqd25n15-52 sqd25n15-52-ge3 sqd25n15-52_ge3 sqd30n05-20l sqd30n05-20l-ge3 sqd30n05-20l_ge3 sqd40n06-14l sqd40n06-14l-ge3 sqd40n06-14l_ge3 sqd40n10-25 sqd40n10-25-ge3 sqd40n10-25_ge3 sqd40p10-40l sqd40p10-40l-ge3 sqd40p10-40l_ge3 sqd45p03-12 sqd45p03-12-ge3 sqd45p03-12_ge3 sqd50n04-5m6 sqd50n04-5m6-ge3 sqd50n04-5m6_ge3 sqd50n04-5m6l - sqd50n04-5m6l_ge3 sqd50n05-11l sqd50n05-11l-ge3 sqd50n05-11l_ge3 sqd50n06-09l sqd50n06-09l-ge3 sqd50n06-09l_ge3 sqd50n10-8m9l sqd50n10-8m9l-ge3 sqd50n10-8m9l_ge3 sqd50p03-07 sqd50p03-07-ge3 sqd50p03-07_ge3 sqd50p04-13l sqd50p04-13l-ge3 sqd50p04-13l_ge3 sqd50p04-09l sqd50p04-09l-ge3 sqd50p04-09l_ge3 sqd50p06-15l sqd50p06-15l-ge3 sqd50p06-15l_ge3 sqd50p08-25l sqd50p08-25l-ge3 sqd50p08-25l_ge3 sqd50p08-28 sqd50p08-28-ge3 sqd50p08-28_ge3 sqd70140el - sqd70140el_ge3 sqd90p04-9m4l sqd90p04-9m4l-ge3 sqd90p04-9m4l_ge3 sqd97n06-6m3l sqd97n06-6m3l-ge3 sqd97n06-6m3l_ge3 sqr40n10-25 sqr40n10-25-ge3 sqr40n10-25_ge3 sqr50n04-3m8 sqr50n04-3m8-ge3 sqr50n04-3m8_ge3
package information www.vishay.com vishay siliconix revision: 02-sep-13 1 document number: 64424 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-252aa case outline note ? dimension l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 4.10 - 0.161 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.01 1.52 0.040 0.060 ecn: t13-0592-rev. a, 02-sep-13 ? dwg: 6019
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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